Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2023, 14, 434–453, doi:10.3762/bjnano.14.35

• improves single heterojunction yields. The improved structural control of heterojunctions is expected to enable the incorporation of graphene nanoribbon heterostructures with atomic precision in future nanoelectronic devices. Nanocarbons with a defined two-dimensional extent are also attractive targets for

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• ; nanoelectronic devices; optical addressing; Ru-terpyridine wires; Introduction Discernible properties of nanoelectronic and molecular devices are directly influenced by the molecular structure of the constituting molecular systems, the intermolecular and interfacial interactions and the design of the device

Measurement of electrostatic tip–sample interactions by time-domain Kelvin probe force microscopy

• Christian Ritz,
• Tino Wagner and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2020, 11, 911–921, doi:10.3762/bjnano.11.76

• active nanoelectronic devices. Kelvin probe force microscopy (KFM) is a technique used to quantitatively characterize such electrical properties [1][2][3]. It is applied to map material compositions via changes in the work function, to localize charge distributions in dielectric samples [4][5], and to

• characterize doping profiles via scanning capacitance measurements [6]. Especially in the field of nanoelectronic devices, this kind of electrical characterizations is of great interest. Local potential drops across active nanostructures reveal information about the local resistivity and can provide crucial

Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine

• K. Priya Madhuri,
• Abhay A. Sagade,
• Pralay K. Santra and
• Neena S. John

Beilstein J. Nanotechnol. 2020, 11, 814–820, doi:10.3762/bjnano.11.66

• K. Priya Madhuri Abhay A. Sagade Pralay K. Santra Neena S. John Centre for Nano and Soft Matter Sciences, Jalahalli, Bengaluru 560 013, India Laboratory for Advanced Nanoelectronic Devices, Sir C. V. Raman Research Park, Department of Physics & Nanotechnology, SRM Institute of Science and

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• as platforms for fully two-dimensional nanoelectronic devices [7][8][9][10][11]. Resonant tunneling diodes (RTDs) are among various electronic devices realized on the platform of 2D Gr/hBN heterostructures [12][13][14][15][16]. RTDs exhibit negative differential resistance (NDR) and have a wide range

• single substitutional defect can severely alter the NDR behavior of RTDs based on AGNR/ABNNR heterojunctions. This implies that by intentionally introducing such defects in devices based on AGNR/ABNNR heterojunctions, nanoelectronic devices with desired performance characteristics can be designed

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

• Levente Máthé and
• Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

• graphene-based nanoelectronic devices. Graphene is a two-dimensional layer of graphite. Such layers were isolated experimentally about a decade ago [1][2] and described theoretically about half a century ago [49]. The carbon atoms in graphene are arranged in a hexagonal (honeycomb) lattice. The hexagonal

• . Therefore, we suggest an experimental realization of the system, as shown in Figure 1, which will verify our theoretical model. We hope that the results obtained will contribute to the development of new graphene-based nanoelectronic devices. (a) Schematic picture of a QD coupled to pure monolayer graphene

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• 01069, Germany 10.3762/bjnano.9.267 Abstract For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si

Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system

• Karolline A. S. Araujo,
• Luiz A. Cury,
• Matheus J. S. Matos,
• Thales F. D. Fernandes,
• Luiz G. Cançado and
• Bernardo R. A. Neves

Beilstein J. Nanotechnol. 2018, 9, 963–974, doi:10.3762/bjnano.9.90

• on optoelectronic devices possible. In another front, self-assembled monolayers (SAMs) on low-dimensional systems, such as a graphene (an archetypical 2D material), have attracted significant attention due to the myriad of applications in nanoelectronic devices [14][15][16]. Aiming at the improvement

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• doping drastically decreases the spatial heterogeneity of charge carriers in graphene doped with nitrogen, while the opposite effect was observed for undoped samples. The results of this study should be taken into account for the development of sensors and nanoelectronic devices based on graphene

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• -nanoelectronics [10]. The discovery of carbon NTs in 1991 unfolded new possibilities for the development of future generation nanoelectronic devices. Growing interest in the tubular structures motivated the synthesis of different semiconductor NTs, one of them being GaN NTs. Comparing to NWs and nanocolumns, NTs

Identifying the nature of surface chemical modification for directed self-assembly of block copolymers

• Laura Evangelio,
• Federico Gramazio,
• Matteo Lorenzoni,
• Michaela Gorgoi,
• Francisco Miguel Espinosa,
• Ricardo García,
• Francesc Pérez-Murano and
• Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 1972–1981, doi:10.3762/bjnano.8.198

• complementary alternative to traditional patterning methods providing sub-10 nm resolution, low-cost processing and high throughput [1][2][3]. Moreover, it is one of the most promising techniques for the development of the next generation of nanoelectronic devices and circuits, as it is compatible with current

Copper atomic-scale transistors

• Fangqing Xie,
• Maryna N. Kavalenka,
• Moritz Röger,
• Daniel Albrecht,
• Hendrik Hölscher,
• Jürgen Leuthold and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2017, 8, 530–538, doi:10.3762/bjnano.8.57

• the most promising alternative concepts. Resistive nanoelectronic devices are operated under one of the following switching mechanisms: electrostatic/electronic, electrochemical metallization, valence-change memory, thermochemical memory or phase change [1][2][3][4][5]. Resistive devices are a non

Charge and heat transport in soft nanosystems in the presence of time-dependent perturbations

• Alberto Nocera,
• Carmine Antonio Perroni,
• Vincenzo Marigliano Ramaglia and
• Vittorio Cataudella

Beilstein J. Nanotechnol. 2016, 7, 439–464, doi:10.3762/bjnano.7.39

• -dependent perturbations; Introduction In some nanoelectronic devices, internal soft degrees of freedom, such as slow vibrational modes, cannot be neglected since they actively modulate the transport properties. Indeed, the electron–vibration coupling significantly affects the charge and heat transport of

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

• Tino Wagner,
• Hannes Beyer,
• Patrick Reissner,
• Philipp Mensch,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2015, 6, 2193–2206, doi:10.3762/bjnano.6.225

• modulation; Kalman filter; Kelvin probe force microscopy; sidebands; Introduction Device performance of current nanoelectronic devices, and even more so of potential future generations including nanowires or molecular junctions, critically depends on transport properties varying on a length scale of a few

Nonconservative current-driven dynamics: beyond the nanoscale

• Brian Cunningham,
• Tchavdar N. Todorov and
• Daniel Dundas

Beilstein J. Nanotechnol. 2015, 6, 2140–2147, doi:10.3762/bjnano.6.219

• transport; failure mechanisms; nanoelectronic devices; nanomotors; Introduction The development of electronic devices at the nanoscale is a challenging avenue of research with the aim of improving their efficiency and performance. This requires an understanding of the mechanisms for energy transfer from

Possibilities and limitations of advanced transmission electron microscopy for carbon-based nanomaterials

• Xiaoxing Ke,
• Carla Bittencourt and
• Gustaaf Van Tendeloo

Beilstein J. Nanotechnol. 2015, 6, 1541–1557, doi:10.3762/bjnano.6.158

• applications. Two important examples are the studies of the interface formation at electrical contacts between CNTs and a metal, which needs to be understood for applications in nanoelectronic devices [67], and nanocatalysts where CNTs are used as conducting bed for efficient charge transfer [68][69

Enhancing the thermoelectric figure of merit in engineered graphene nanoribbons

• Hatef Sadeghi,
• Sara Sangtarash and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1176–1182, doi:10.3762/bjnano.6.119

• nanoelectronic devices is limited by dissipated power rather than available clock speeds [1]. To address this issue, thermoelectric energy conversion may be an essential ingredient in the design of the next generation of integrated electronics, optoelectronic and photonic devices [2]. On the one hand efficient

Chains of carbon atoms: A vision or a new nanomaterial?

• Florian Banhart

Beilstein J. Nanotechnol. 2015, 6, 559–569, doi:10.3762/bjnano.6.58

• of their outstanding specifications. In many applications, bulk materials containing a large quantity of long chains would be needed. However, in nanoelectronic devices, working with single molecules or few-atom clusters, isolated chains of carbon atoms could find their applications in the future. In

Hybrid spin-crossover nanostructures

• Carlos M. Quintero,
• Gautier Félix,
• Iurii Suleimanov,
• José Sánchez Costa,
• Gábor Molnár,
• Lionel Salmon,
• William Nicolazzi and
• Azzedine Bousseksou

Beilstein J. Nanotechnol. 2014, 5, 2230–2239, doi:10.3762/bjnano.5.232

• appropriate design, even for the development of photonic self-oscillators. Nanoelectronic devices The act of inducing an SCO transition with an electric field could provide the breakthrough necessary for the development of working molecular memory devices. With this in mind, Zhang et al. designed an

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

• Domenico Melisi,
• Maria Angela Nitti,
• Marco Valentini,
• Antonio Valentini,
• Teresa Ligonzo,
• Giuseppe De Pascali and
• Marianna Ambrico

Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208

• (CNTs) in this field have shown interesting results, in particular in new technologically advanced nanoelectronic devices [4][5]. Photodetectors based on films of CNTs (both bundle and carpet distribution) on silicon, have been previously analyzed in the visible and IR spectral regions [6][7]. Moreover

Analytical development and optimization of a graphene–solution interface capacitance model

• Hediyeh Karimi,
• Rasoul Rahmani,
• Reza Mashayekhi,
• Leyla Ranjbari,
• Amir H. Shirdel,
• Niloofar Haghighian,
• Parisa Movahedi,
• Moein Hadiyan and
• Razali Ismail

Beilstein J. Nanotechnol. 2014, 5, 603–609, doi:10.3762/bjnano.5.71

• Discussion Proposed model The quantum capacitance of nanoscale devices is considered as an important quantity in the design of nanoelectronic devices. The classic expression for quantum capacitance utilized in the prediction of the theoretical model for an ideal single layer graphene [27][28] is in which ∂Q

Size-dependent characteristics of electrostatically actuated fluid-conveying carbon nanotubes based on modified couple stress theory

• Mir Masoud Seyyed Fakhrabadi,
• Abbas Rastgoo and
• Mohammad Taghi Ahmadian

Beilstein J. Nanotechnol. 2013, 4, 771–780, doi:10.3762/bjnano.4.88

• ]. Rasekh and Khadem added to the mathematical modeling of CNT-based NEMS more comprehensive results about the static and dynamic behavior of the CNTs under electrostatic and vdW forces [20]. Potential applications of CNTs range from nanoelectronic devices to nanofluidic systems [21][22][23][24][25][26

Functionalization of vertically aligned carbon nanotubes

• Eloise Van Hooijdonk,
• Carla Bittencourt,
• Rony Snyders and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2013, 4, 129–152, doi:10.3762/bjnano.4.14

• SWCNTs and graphene. The covalent bond between both elements leads to an ohmic contact at the junction. In parallel to this efficient electrical contact, a SSA between 2,000 and 2,600 m2·g−1 was measured. This work opens perspectives for potential applications in energy storage and nanoelectronic devices

Surface functionalization of aluminosilicate nanotubes with organic molecules

• Wei Ma,
• Weng On Yah,
• Hideyuki Otsuka and
• Atsushi Takahara

Beilstein J. Nanotechnol. 2012, 3, 82–100, doi:10.3762/bjnano.3.10

• thought of as an insulator since imogolites consist of wide-bandgap alumina and silica. In fact, due to its unique tubular structure and high aspect ratio, imogolite can be used as an electron-emitting material and water sensor in nanoelectronic devices. The conductivities of the pure imogolite and of the

Interaction of spin and vibrations in transport through single-molecule magnets

• Falk May,
• Maarten R. Wegewijs and
• Walter Hofstetter

Beilstein J. Nanotechnol. 2011, 2, 693–698, doi:10.3762/bjnano.2.75

• can strongly enhance the Kondo effect and induce an anomalous magnetic field dependence of vibrational Kondo side-bands. Keywords: molecular electronic devices; molecular magnets; nanoelectronic devices; quantum dots; Introduction Transport measurements on nanometer-sized magnetic systems address